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SOT666
Discrete Semiconductor Products

NX3008PBKV,115

NRND
Nexperia USA Inc.

30 V, 220 MA DUAL P-CHANNEL TRENCH MOSFET

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SOT666
Discrete Semiconductor Products

NX3008PBKV,115

NRND
Nexperia USA Inc.

30 V, 220 MA DUAL P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationNX3008PBKV,115
Configuration2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C220 mA
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.72 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds46 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-563, SOT-666
Power - Max [Max]500 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.1 Ohm
Supplier Device PackageSOT-666
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
10$ 0.28
100$ 0.14
500$ 0.12
1000$ 0.10
2000$ 0.09
Digi-Reel® 1$ 0.39
10$ 0.28
100$ 0.14
500$ 0.12
1000$ 0.10
2000$ 0.09
N/A 0$ 0.54
Tape & Reel (TR) 4000$ 0.09
8000$ 0.08
12000$ 0.07
28000$ 0.07
100000$ 0.06

Description

General part information

NX3008 Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.