
Discrete Semiconductor Products
NX3008PBKV,115
NRNDNexperia USA Inc.
30 V, 220 MA DUAL P-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
NX3008PBKV,115
NRNDNexperia USA Inc.
30 V, 220 MA DUAL P-CHANNEL TRENCH MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | NX3008PBKV,115 |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 220 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 0.72 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-563, SOT-666 |
| Power - Max [Max] | 500 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 4.1 Ohm |
| Supplier Device Package | SOT-666 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1 V |
NX3008 Series
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
| Part | Grade | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Technology | Power - Max [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | FET Feature | Package / Case | Configuration | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | FET Type | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 200 mA | 6-TSSOP | 4.1 Ohm | MOSFET (Metal Oxide) | 445 mW | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | Logic Level Gate | 6-TSSOP SC-88 SOT-363 | 2 P-Channel (Dual) | AEC-Q101 | 46 pF | 0.75 nC | ||||||||||
Nexperia USA Inc. | Automotive | 220 mA | SOT-666 | 4.1 Ohm | MOSFET (Metal Oxide) | 500 mW | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | Logic Level Gate | SOT-563 SOT-666 | 2 P-Channel (Dual) | AEC-Q101 | 46 pF | 0.72 nC | ||||||||||
Nexperia USA Inc. | Automotive | 350 mA | SOT-323 | 1.4 Ohm | MOSFET (Metal Oxide) | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | SC-70 SOT-323 | AEC-Q101 | 0.68 nC | 1.8 V | 4.5 V | 260 mW 830 mW | N-Channel | 8 V | 50 pF | ||||||||
Nexperia USA Inc. | Automotive | 400 mA | TO-236AB | 1.4 Ohm | MOSFET (Metal Oxide) | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | 0.68 nC | 1.8 V | 4.5 V | 1.14 W 350 mW | N-Channel | 8 V | 50 pF | ||||||||
Nexperia USA Inc. | Automotive | 200 mA 350 mA | 6-TSSOP | 1.4 Ohm | MOSFET (Metal Oxide) | 445 mW | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | Logic Level Gate | 6-TSSOP SC-88 SOT-363 | N and P-Channel | AEC-Q101 | 0.68 nC | 50 pF | ||||||||||
Nexperia USA Inc. | 300 mA | DFN1006B-3 | 4.1 Ohm | MOSFET (Metal Oxide) | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | 3-XFDFN SC-101 SOT-883 | 46 pF | 0.72 nC | 1.8 V | 4.5 V | P-Channel | 8 V | 2.7 W | 360 mW | |||||||||
Nexperia USA Inc. | Automotive | 400 mA | SOT-666 | 1.4 Ohm | MOSFET (Metal Oxide) | 500 mW | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | Logic Level Gate | SOT-563 SOT-666 | 2 N-Channel (Dual) | AEC-Q101 | 0.68 nC | 50 pF | ||||||||||
Nexperia USA Inc. | Automotive | 200 mA | SOT-323 | 4.1 Ohm | MOSFET (Metal Oxide) | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | SC-70 SOT-323 | AEC-Q101 | 46 pF | 0.72 nC | 2.5 V | 4.5 V | 260 mW 830 mW | P-Channel | 8 V | ||||||||
Nexperia USA Inc. | Automotive | 400 mA | TO-236AB | 1.4 Ohm | MOSFET (Metal Oxide) | 30 V | 1.1 V | Surface Mount | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | 0.68 nC | 1.8 V | 4.5 V | 1.14 W 350 mW | N-Channel | 8 V | 50 pF | 150 °C | |||||||||
Nexperia USA Inc. | 530 mA | DFN1006B-3 | 1.4 Ohm | MOSFET (Metal Oxide) | 30 V | 1.1 V | Surface Mount | 150 °C | -55 °C | 3-XFDFN | 0.68 nC | 1.8 V | 4.5 V | N-Channel | 8 V | 50 pF | 2.7 W | 360 mW |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.39 | |
| 10 | $ 0.28 | |||
| 100 | $ 0.14 | |||
| 500 | $ 0.12 | |||
| 1000 | $ 0.10 | |||
| 2000 | $ 0.09 | |||
| Digi-Reel® | 1 | $ 0.39 | ||
| 10 | $ 0.28 | |||
| 100 | $ 0.14 | |||
| 500 | $ 0.12 | |||
| 1000 | $ 0.10 | |||
| 2000 | $ 0.09 | |||
| N/A | 0 | $ 0.54 | ||
| Tape & Reel (TR) | 4000 | $ 0.09 | ||
| 8000 | $ 0.08 | |||
| 12000 | $ 0.07 | |||
| 28000 | $ 0.07 | |||
| 100000 | $ 0.06 | |||
Description
General part information
NX3008 Series
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources