
STGB20NB41LZT4
ActiveIGBT SINGLE TRANSISTOR, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 ROHS COMPLIANT: YES
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STGB20NB41LZT4
ActiveIGBT SINGLE TRANSISTOR, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGB20NB41LZT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 46 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 200 W |
| Supplier Device Package | D2PAK |
| Switching Energy | 12.9 mJ, 5 mJ |
| Td (on/off) @ 25°C | 1 µs, 12.1 µs |
| Test Condition | 320 V, 1 kOhm, 20 A, 5 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 442 V |
STGB20 Series
Trench gate field-stop IGBT M series, 650 V 20 A low loss
| Part | Qualification | Td (on/off) @ 25°C [custom] | Td (on/off) @ 25°C [custom] | Current - Collector (Ic) (Max) [Max] | Grade | Mounting Type | Input Type | Vce(on) (Max) @ Vge, Ic | Supplier Device Package | Power - Max [Max] | Current - Collector Pulsed (Icm) | Test Condition | Gate Charge | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Switching Energy | Td (on/off) @ 25°C | Reverse Recovery Time (trr) | Td (on/off) @ 25°C [Min] | Td (on/off) @ 25°C [Max] | IGBT Type | Vce(on) (Max) @ Vge, Ic [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | AEC-Q101 | 4.6 µs | 1.1 µs | 25 A | Automotive | Surface Mount | Logic | 1.25 V | TO-263 (D2PAK) | 150 W | 50 A | 1 kOhm 5 V 10 A 300 V | 26 nC | 450 V | 175 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |||||||
STMicroelectronics | 2 µs | 2.3 µs | 40 A | Surface Mount | 2 V | D2PAK | 200 W | 80 A | 1 kOhm 4.5 V 20 A 250 V | 51 nC | 425 V | 175 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 11.8 mJ | |||||||||
STMicroelectronics | 60 A | Surface Mount | 2.5 V | TO-263 (D2PAK) | 200 W | 100 A | 3.3 Ohm 15 V 20 A 390 V | 100 nC | 600 V | 150 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 220 µJ 330 µJ | 31 ns 100 ns | ||||||||||
STMicroelectronics | 40 A | Surface Mount | D2PAK | 167 W | 80 A | 15 V 20 A 400 V | 116 nC | 600 V | 175 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 130 µJ 200 µJ | 40 ns | 38 ns | 149 ns | Trench Field Stop | 2.2 V | |||||||
STMicroelectronics | 40 A | Surface Mount | D2PAK | 166 W | 80 A | 12 Ohm 15 V 20 A 400 V | 63 nC | 650 V | 175 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 140 µJ 560 µJ | 166 ns | 26 ns | 108 ns | Trench Field Stop | 2 V | |||||||
STMicroelectronics | 40 A | Surface Mount | 2 V | D2PAK | 200 W | 80 A | 1 kOhm 5 V 20 A 320 V | 46 nC | 442 V | 175 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 5 mJ 12.9 mJ | 1 µs 12.1 µs | ||||||||||
STMicroelectronics | 177 ns | 42.5 ns | 40 A | Surface Mount | D2PAK | 167 W | 80 A | 10 Ohm 15 V 20 A 400 V | 115 nC | 600 V | 175 °C | -55 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 209 µJ 261 µJ | 90 ns | Trench Field Stop | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB20 Series
This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.
Documents
Technical documentation and resources