STGB20 Series

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Catalog

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Part	Qualification	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector (Ic) (Max) [Max]	Grade	Mounting Type	Input Type	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Power - Max [Max]	Current - Collector Pulsed (Icm)	Test Condition	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Switching Energy	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic [Max]
STMicroelectronics STGB20N45LZAG	AEC-Q101	4.6 µs	1.1 µs	25 A	Automotive	Surface Mount	Logic	1.25 V	TO-263 (D2PAK)	150 W	50 A	1 kOhm 5 V 10 A 300 V	26 nC	450 V	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
STMicroelectronics STGB20NB37LZ		2 µs	2.3 µs	40 A		Surface Mount		2 V	D2PAK	200 W	80 A	1 kOhm 4.5 V 20 A 250 V	51 nC	425 V	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	11.8 mJ
STMicroelectronics STGB20NC60VT4				60 A		Surface Mount		2.5 V	TO-263 (D2PAK)	200 W	100 A	3.3 Ohm 15 V 20 A 390 V	100 nC	600 V	150 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	220 µJ 330 µJ	31 ns 100 ns
STMicroelectronics STGB20V60DF				40 A		Surface Mount			D2PAK	167 W	80 A	15 V 20 A 400 V	116 nC	600 V	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	130 µJ 200 µJ		40 ns	38 ns	149 ns	Trench Field Stop	2.2 V
STMicroelectronics STGB20M65DF2				40 A		Surface Mount			D2PAK	166 W	80 A	12 Ohm 15 V 20 A 400 V	63 nC	650 V	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	140 µJ 560 µJ		166 ns	26 ns	108 ns	Trench Field Stop	2 V
STMicroelectronics STGB20NB41LZT4				40 A		Surface Mount		2 V	D2PAK	200 W	80 A	1 kOhm 5 V 20 A 320 V	46 nC	442 V	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 mJ 12.9 mJ	1 µs 12.1 µs
STMicroelectronics STGB20H60DF		177 ns	42.5 ns	40 A		Surface Mount			D2PAK	167 W	80 A	10 Ohm 15 V 20 A 400 V	115 nC	600 V	175 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	209 µJ 261 µJ		90 ns			Trench Field Stop	2 V

Catalog

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Description

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.