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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STGB20H60DF

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STMicroelectronics

600 V, 20 A HIGH SPEED TRENCH GATE FIELD-STOP IGBT

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STGB20H60DF

Active
STMicroelectronics

600 V, 20 A HIGH SPEED TRENCH GATE FIELD-STOP IGBT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGB20H60DF
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)80 A
Gate Charge115 nC
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]167 W
Reverse Recovery Time (trr)90 ns
Supplier Device PackageD2PAK
Switching Energy261 µJ, 209 µJ
Td (on/off) @ 25°C [custom]42.5 ns
Td (on/off) @ 25°C [custom]177 ns
Test Condition20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic [Max]2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.08
10$ 1.73
100$ 1.38
500$ 1.16
Digi-Reel® 1$ 2.08
10$ 1.73
100$ 1.38
500$ 1.16
N/A 0$ 2.73
Tape & Reel (TR) 1000$ 0.97
2000$ 0.90
3000$ 0.87

Description

General part information

STGB20 Series

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.