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NST857BF3T5G
Discrete Semiconductor Products

NST3904F3T5G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 200 MA, 290 MW, SOT-1123, SURFACE MOUNT

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NST857BF3T5G
Discrete Semiconductor Products

NST3904F3T5G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 200 MA, 290 MW, SOT-1123, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNST3904F3T5G
Current - Collector (Ic) (Max) [Max]200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition200 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1123
Power - Max [Max]290 mW
Supplier Device PackageSOT-1123
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.37
10$ 0.23
100$ 0.14
500$ 0.11
1000$ 0.09
2000$ 0.08
Digi-Reel® 1$ 0.37
10$ 0.23
100$ 0.14
500$ 0.11
1000$ 0.09
2000$ 0.08
Tape & Reel (TR) 8000$ 0.07
16000$ 0.06
24000$ 0.06
40000$ 0.06
56000$ 0.05
80000$ 0.05
NewarkEach (Supplied on Full Reel) 6000$ 0.07
12000$ 0.06
18000$ 0.06
30000$ 0.05
ON SemiconductorN/A 1$ 0.05

Description

General part information

NST3904F3T5G Series

The Dual NPN Bipolar Transistor device is a spin off of our popular SOT23, SOT323, SOT563 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. With two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.