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3-X2DFN
Discrete Semiconductor Products

NST3904MX2T5G

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ON Semiconductor

200 MA, 40 V, NPN BIPOLAR TRANSISTOR IN SOT-883

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3-X2DFN
Discrete Semiconductor Products

NST3904MX2T5G

Active
ON Semiconductor

200 MA, 40 V, NPN BIPOLAR TRANSISTOR IN SOT-883

Technical Specifications

Parameters and characteristics for this part

SpecificationNST3904MX2T5G
Current - Collector (Ic) (Max) [Max]200 mA
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power - Max [Max]165 mW
Supplier Device Package3-X2DFN (1x0.6)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.25
100$ 0.13
500$ 0.10
1000$ 0.08
2000$ 0.06
Digi-Reel® 1$ 0.36
10$ 0.25
100$ 0.13
500$ 0.10
1000$ 0.08
2000$ 0.06
Tape & Reel (TR) 8000$ 0.05
16000$ 0.05
24000$ 0.04
40000$ 0.04
NewarkEach (Supplied on Full Reel) 6000$ 0.06
12000$ 0.05
18000$ 0.05
30000$ 0.04
ON SemiconductorN/A 1$ 0.03

Description

General part information

NST3904F3T5G Series

The Dual NPN Bipolar Transistor device is a spin off of our popular SOT23, SOT323, SOT563 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. With two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.