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Technical Specifications
Parameters and characteristics for this part
| Specification | NSVT3904DP6T5G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-963 |
| Power - Max [Max] | 350 mW |
| Supplier Device Package | SOT-963 |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NST3904F3T5G Series
The Dual NPN Bipolar Transistor device is a spin off of our popular SOT23, SOT323, SOT563 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. With two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.
Documents
Technical documentation and resources