Discrete Semiconductor Products

STTH4R02

Obsolete

DIODE GEN PURP 200V 4A DO201AB

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 200V 4A DO201AB

Technical Specifications

Parameters and characteristics for this part

Specification	STTH4R02

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	DO-32, Axial, DO-201AB
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-201AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.05 V

Part	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Technology	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed
STMicroelectronics STTH4R02	DO-201AB	Through Hole	175 ░C	30 ns	Standard	3 µA	Axial DO-201AB DO-32	4 A	200 V	1.05 V	200 mA 500 ns
STMicroelectronics STTH4R02U	SMB	Surface Mount	175 ░C	30 ns	Standard	3 µA	DO-214AA SMB	4 A	200 V	1.05 V	200 mA 500 ns
STMicroelectronics STTH4R02D	TO-220AC	Through Hole	175 ░C	30 ns	Standard	3 µA	TO-220-2	4 A	200 V	1.05 V	200 mA 500 ns
STMicroelectronics STTH4R02S	SMC	Surface Mount	175 ░C	30 ns	Standard	3 µA	DO-214AB SMC	4 A	200 V	1.05 V	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.28

General part information

Diode 200 V 4A Through Hole DO-201AB

Technical documentation and resources