Discrete Semiconductor Products

STTH4R02U

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200 V, 4 A HIGH EFFIENCY ULTRAFAST DIODE

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Discrete Semiconductor Products

Active

200 V, 4 A HIGH EFFIENCY ULTRAFAST DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	STTH4R02U

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	SMB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.05 V

Part	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Technology	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed
STMicroelectronics STTH4R02	DO-201AB	Through Hole	175 ░C	30 ns	Standard	3 µA	Axial DO-201AB DO-32	4 A	200 V	1.05 V	200 mA 500 ns
STMicroelectronics STTH4R02U	SMB	Surface Mount	175 ░C	30 ns	Standard	3 µA	DO-214AA SMB	4 A	200 V	1.05 V	200 mA 500 ns
STMicroelectronics STTH4R02D	TO-220AC	Through Hole	175 ░C	30 ns	Standard	3 µA	TO-220-2	4 A	200 V	1.05 V	200 mA 500 ns
STMicroelectronics STTH4R02S	SMC	Surface Mount	175 ░C	30 ns	Standard	3 µA	DO-214AB SMC	4 A	200 V	1.05 V	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged in DPAK, SMB and SMC, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection.