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MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD12NF06LT4

Obsolete
STMicroelectronics

N-CHANNEL 60 V, 70 MOHM TYP., 12 A, STRIPFET II POWER MOSFET IN A DPAK PACKAGE

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MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD12NF06LT4

Obsolete
STMicroelectronics

N-CHANNEL 60 V, 70 MOHM TYP., 12 A, STRIPFET II POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Documents+12

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD12NF06LT4
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]42.8 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2490$ 1.47

Description

General part information

STD12 Series

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.