Discrete Semiconductor Products

STD127DT4

Obsolete

STMicroelectronics

TRANS NPN 400V 4A DPAK

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DocumentsDatasheet

Discrete Semiconductor Products

STD127DT4

Obsolete

STMicroelectronics

TRANS NPN 400V 4A DPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD127DT4

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	35 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

STD12 Series

N-channel 60 V, 70 mOhm typ., 12 A, StripFET II Power MOSFET in a DPAK package

Part	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	FET Type	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power Dissipation (Max) [Max]	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STD12N50M2	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	N-Channel	Surface Mount	85 W	10 V	380 mOhm	10 A	MOSFET (Metal Oxide)	150 °C	-55 °C	DPAK	550 pF	500 V	15 nC
STMicroelectronics STD12N60DM6	4.75 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	N-Channel	Surface Mount	90 W		390 mOhm	10 A	MOSFET (Metal Oxide)	150 °C	-55 °C	TO-252 (DPAK)		600 V	17 nC	508 pF
STMicroelectronics STD12N50DM2	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	N-Channel	Surface Mount	110 W	10 V	350 mOhm	11 A	MOSFET (Metal Oxide)	150 °C	-55 °C	DPAK		500 V	16 nC	628 pF
STMicroelectronics STD127DT4		DPAK (2 Leads + Tab) SC-63 TO-252-3			Surface Mount								DPAK					35 W	4 A	400 V	250 µA	10	150 °C	NPN	1.3 V
STMicroelectronics STD12NF06LT4	2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16 V	N-Channel	Surface Mount		5 V 10 V	100 mOhm	12 A	MOSFET (Metal Oxide)	175 °C	-55 °C	DPAK		60 V	10 nC	350 pF									42.8 W	Automotive	AEC-Q101
STMicroelectronics STD12NF06T4	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	N-Channel	Surface Mount		10 V	100 mOhm	12 A	MOSFET (Metal Oxide)	175 °C	-55 °C	DPAK	315 pF	60 V														12 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.33

Description

General part information

STD12 Series

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Documents

Technical documentation and resources