Discrete Semiconductor Products

STD12N50DM2

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STMicroelectronics

N-CHANNEL 500 V, 0.299 OHM TYP., 11 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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Discrete Semiconductor Products

STD12N50DM2

Active

STMicroelectronics

N-CHANNEL 500 V, 0.299 OHM TYP., 11 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD12N50DM2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC
Input Capacitance (Ciss) (Max) @ Vds	628 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STD12 Series

N-channel 60 V, 70 mOhm typ., 12 A, StripFET II Power MOSFET in a DPAK package

Part	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	FET Type	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power Dissipation (Max) [Max]	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STD12N50M2	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 V	N-Channel	Surface Mount	85 W	10 V	380 mOhm	10 A	MOSFET (Metal Oxide)	150 °C	-55 °C	DPAK	550 pF	500 V	15 nC
STMicroelectronics STD12N60DM6	4.75 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	N-Channel	Surface Mount	90 W		390 mOhm	10 A	MOSFET (Metal Oxide)	150 °C	-55 °C	TO-252 (DPAK)		600 V	17 nC	508 pF
STMicroelectronics STD12N50DM2	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	N-Channel	Surface Mount	110 W	10 V	350 mOhm	11 A	MOSFET (Metal Oxide)	150 °C	-55 °C	DPAK		500 V	16 nC	628 pF
STMicroelectronics STD127DT4		DPAK (2 Leads + Tab) SC-63 TO-252-3			Surface Mount								DPAK					35 W	4 A	400 V	250 µA	10	150 °C	NPN	1.3 V
STMicroelectronics STD12NF06LT4	2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16 V	N-Channel	Surface Mount		5 V 10 V	100 mOhm	12 A	MOSFET (Metal Oxide)	175 °C	-55 °C	DPAK		60 V	10 nC	350 pF									42.8 W	Automotive	AEC-Q101
STMicroelectronics STD12NF06T4	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	N-Channel	Surface Mount		10 V	100 mOhm	12 A	MOSFET (Metal Oxide)	175 °C	-55 °C	DPAK	315 pF	60 V														12 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.72
		10	$ 1.43
		100	$ 1.14
		500	$ 0.96
		1000	$ 0.82
	Digi-Reel®	1	$ 1.72
		10	$ 1.43
		100	$ 1.14
		500	$ 0.96
		1000	$ 0.82
	N/A	434	$ 2.21
	Tape & Reel (TR)	2500	$ 0.75
Mouser	N/A	1	$ 2.06
		10	$ 1.42
		100	$ 1.13
		500	$ 0.95
		1000	$ 0.82
		2500	$ 0.78
		5000	$ 0.75

Description

General part information

STD12 Series

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

STD12N50DM2

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STD12N50DM2

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Technical Specifications

STD12 Series

Pricing

Description

STD12 Series

Documents

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STD12 Series