
Discrete Semiconductor Products
NVTFS6H888NLTAG
ActiveON Semiconductor
MOSFET, N-CH, 80V, 14A, WDFN ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
NVTFS6H888NLTAG
ActiveON Semiconductor
MOSFET, N-CH, 80V, 14A, WDFN ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVTFS6H888NLTAG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14 A, 4.9 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 258 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 2.9 W, 23 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NVTFS6H860NL Series
Automotive Power MOSFET in a 3.3 x 3.3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources