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8-WDFN
Discrete Semiconductor Products

NVTFS6H888NLTAG

Active
ON Semiconductor

MOSFET, N-CH, 80V, 14A, WDFN ROHS COMPLIANT: YES

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8-WDFN
Discrete Semiconductor Products

NVTFS6H888NLTAG

Active
ON Semiconductor

MOSFET, N-CH, 80V, 14A, WDFN ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVTFS6H888NLTAG
Current - Continuous Drain (Id) @ 25°C14 A, 4.9 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds258 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.9 W, 23 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.03
10$ 0.65
100$ 0.42
500$ 0.33
Digi-Reel® 1$ 1.03
10$ 0.65
100$ 0.42
500$ 0.33
Tape & Reel (TR) 1500$ 0.22
NewarkEach (Supplied on Cut Tape) 1$ 0.54
10$ 0.53
25$ 0.49
50$ 0.44
100$ 0.39
250$ 0.35
500$ 0.32
1000$ 0.29

Description

General part information

NVTFS6H860NL Series

Automotive Power MOSFET in a 3.3 x 3.3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources