NVTFS6H860NL Series

MOSFET - Power, Single N-Channel, 80 V, 20 mΩ 30 A - NVTFS6H860NL

Catalog

MOSFET - Power, Single N-Channel, 80 V, 20 mΩ 30 A - NVTFS6H860NL

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Qualification	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NVTFS6H850NLTAG	80 V	14.8 A 64 A	20 V	MOSFET (Metal Oxide)	1450 pF	8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	26 nC	Automotive	2 V	8-PowerWDFN	4.5 V 10 V	3.9 W 73 W	-55 °C	175 ░C	8.6 mOhm	N-Channel
ON Semiconductor NVTFS6H880NLWFTAG	80 V	6.6 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	9 nC	Automotive	2 V	8-PowerWDFN	4.5 V 10 V	3.1 W 33 W	-55 °C	175 ░C	29 mOhm	N-Channel	22 A	431 pF
ON Semiconductor NVTFS6H860NTAG	80 V	8 A 30 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	8.7 nC	Automotive	4 V	8-PowerWDFN	10 V	3.1 W 46 W	-55 °C	175 ░C	21.1 mOhm	N-Channel		510 pF
ON Semiconductor NVTFS6H850NWFTAG	80 V		20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount		Automotive	4 V	8-PowerWDFN	10 V	3.2 W 107 W	-55 °C	175 ░C	9.5 mOhm	N-Channel		1140 pF	11 A 68 A	19 nC
ON Semiconductor NVTFS6H854NTAG	80 V	9.5 A 44 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	13 nC	Automotive	4 V	8-PowerWDFN	10 V	3.2 W 68 W	-55 °C	175 ░C		N-Channel		770 pF			14.5 mOhm
ON Semiconductor NVTFS6H888NLTAG	80 V	4.9 A 14 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount		Automotive	2 V	8-PowerWDFN	4.5 V 10 V	2.9 W 23 W	-55 °C	175 ░C	50 mOhm	N-Channel		258 pF		6 nC
ON Semiconductor NVTFS6H860NLTAG	80 V	8.1 A 30 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	12 nC	Automotive	2 V	8-PowerWDFN	4.5 V 10 V	3.1 W 42 W	-55 °C	175 ░C	20 mOhm	N-Channel		610 pF
ON Semiconductor NVTFS6H854NWFTAG	80 V	9.5 A 44 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	13 nC	Automotive	4 V	8-PowerWDFN	10 V	3.2 W 68 W	-55 °C	175 ░C		N-Channel		770 pF			14.5 mOhm
ON Semiconductor NVTFS6H860NLWFTAG	80 V	8.1 A 30 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	12 nC	Automotive	2 V	8-PowerWDFN	4.5 V 10 V	3.1 W 42 W	-55 °C	175 ░C	20 mOhm	N-Channel		610 pF

Catalog

MOSFET - Power, Single N-Channel, 80 V, 20 mΩ 30 A - NVTFS6H860NL

Key Features

• Small Footprint (3.3 x 3.3 mm)

• Low RDS (on)

• Low QGand Capacitance

• NVTFS6H880NLWF -Wettable Flank Option

• AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 3.3 x 3.3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.