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8-WDFN
Discrete Semiconductor Products

NVTFS6H850NWFTAG

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ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 80V, 68A, 9.5MΩ

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8-WDFN
Discrete Semiconductor Products

NVTFS6H850NWFTAG

Active
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 80V, 68A, 9.5MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNVTFS6H850NWFTAG
Current - Continuous Drain (Id) @ 25°C [Max]11 A, 68 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1140 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)107 W, 3.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs9.5 mOhm
Supplier Device Package8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.69
10$ 1.07
100$ 0.72
500$ 0.57
Digi-Reel® 1$ 1.69
10$ 1.07
100$ 0.72
500$ 0.57
Tape & Reel (TR) 1500$ 0.49
3000$ 0.46
4500$ 0.44
7500$ 0.43
NewarkEach 1000$ 0.57
2500$ 0.46
10000$ 0.45
ON SemiconductorN/A 1$ 0.40

Description

General part information

NVTFS6H860NL Series

Automotive Power MOSFET in a 3.3 x 3.3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.