Specification	NVTFS6H860NTAG

Current - Continuous Drain (Id) @ 25°C	8 A, 30 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	46 W, 3.1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	21.1 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVTFS6H860NL Series

MOSFET - Power, Single N-Channel, 80 V, 20 mΩ 30 A - NVTFS6H860NL

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Qualification	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NVTFS6H850NLTAG	80 V	14.8 A 64 A	20 V	MOSFET (Metal Oxide)	1450 pF	8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	26 nC	Automotive	2 V	8-PowerWDFN	4.5 V 10 V	3.9 W 73 W	-55 °C	175 ░C	8.6 mOhm	N-Channel
ON Semiconductor NVTFS6H880NLWFTAG	80 V	6.6 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	9 nC	Automotive	2 V	8-PowerWDFN	4.5 V 10 V	3.1 W 33 W	-55 °C	175 ░C	29 mOhm	N-Channel	22 A	431 pF
ON Semiconductor NVTFS6H860NTAG	80 V	8 A 30 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	8.7 nC	Automotive	4 V	8-PowerWDFN	10 V	3.1 W 46 W	-55 °C	175 ░C	21.1 mOhm	N-Channel		510 pF
ON Semiconductor NVTFS6H850NWFTAG	80 V		20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount		Automotive	4 V	8-PowerWDFN	10 V	3.2 W 107 W	-55 °C	175 ░C	9.5 mOhm	N-Channel		1140 pF	11 A 68 A	19 nC
ON Semiconductor NVTFS6H854NTAG	80 V	9.5 A 44 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	13 nC	Automotive	4 V	8-PowerWDFN	10 V	3.2 W 68 W	-55 °C	175 ░C		N-Channel		770 pF			14.5 mOhm
ON Semiconductor NVTFS6H888NLTAG	80 V	4.9 A 14 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount		Automotive	2 V	8-PowerWDFN	4.5 V 10 V	2.9 W 23 W	-55 °C	175 ░C	50 mOhm	N-Channel		258 pF		6 nC
ON Semiconductor NVTFS6H860NLTAG	80 V	8.1 A 30 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	12 nC	Automotive	2 V	8-PowerWDFN	4.5 V 10 V	3.1 W 42 W	-55 °C	175 ░C	20 mOhm	N-Channel		610 pF
ON Semiconductor NVTFS6H854NWFTAG	80 V	9.5 A 44 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	13 nC	Automotive	4 V	8-PowerWDFN	10 V	3.2 W 68 W	-55 °C	175 ░C		N-Channel		770 pF			14.5 mOhm
ON Semiconductor NVTFS6H860NLWFTAG	80 V	8.1 A 30 A	20 V	MOSFET (Metal Oxide)		8-WDFN (3.3x3.3)	AEC-Q101	Surface Mount	12 nC	Automotive	2 V	8-PowerWDFN	4.5 V 10 V	3.1 W 42 W	-55 °C	175 ░C	20 mOhm	N-Channel		610 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.60
		10	$ 0.52
		100	$ 0.36
		500	$ 0.30
	Digi-Reel®	1	$ 0.60
		10	$ 0.52
		100	$ 0.36
		500	$ 0.30
	Tape & Reel (TR)	1500	$ 0.26
		3000	$ 0.23
		7500	$ 0.22
		10500	$ 0.20
		37500	$ 0.20
Newark	Each	1000	$ 0.27
		2500	$ 0.21
		10000	$ 0.21
ON Semiconductor	N/A	1	$ 0.18

Description

General part information

NVTFS6H860NL Series

Automotive Power MOSFET in a 3.3 x 3.3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.