Discrete Semiconductor Products

STGFW40V60F

Obsolete

IGBT, SINGLE, 600V, 80A, TO-3PF

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT, SINGLE, 600V, 80A, TO-3PF

Technical Specifications

Parameters and characteristics for this part

Specification	STGFW40V60F

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	226 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power - Max [Max]	62.5 W
Supplier Device Package	TO-3PF
Switching Energy	456 µJ, 411 µJ
Td (on/off) @ 25°C	208 ns, 52 ns
Test Condition	400 V, 10 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic [Max]	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Test Condition	Vce(on) (Max) @ Vge, Ic	Mounting Type	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Supplier Device Package	Switching Energy	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C
STMicroelectronics STGFW40H65FB	80 A	142 ns	40 ns	5 Ohm 15 V 40 A 400 V	2 V	Through Hole	Trench Field Stop	175 °C	-55 °C	210 nC	TO-3PF-3	363 µJ 498 µJ	62.5 W	TO-3P-3 Full Pack	650 V
STMicroelectronics STGFW40V60F	80 A			10 Ohm 15 V 40 A 400 V		Through Hole	Trench Field Stop	175 °C	-55 °C	226 nC	TO-3PF	411 µJ 456 µJ	62.5 W	TO-3P-3 Full Pack	600 V	2.3 V	52 ns 208 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 600 V 80 A 62.5 W Through Hole TO-3PF

Technical documentation and resources