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TO-3PF
Discrete Semiconductor Products

STGFW40H65FB

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STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT

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DocumentsDatasheet+11
TO-3PF
Discrete Semiconductor Products

STGFW40H65FB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT

Deep-Dive with AI

DocumentsDatasheet+11

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGFW40H65FB
Current - Collector (Ic) (Max) [Max]80 A
Gate Charge210 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-3P-3 Full Pack
Power - Max [Max]62.5 W
Supplier Device PackageTO-3PF-3
Switching Energy498 µJ, 363 µJ
Td (on/off) @ 25°C [custom]142 ns
Td (on/off) @ 25°C [custom]40 ns
Test Condition40 A, 5 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 316$ 4.01
Tube 1$ 2.05
30$ 1.62
120$ 1.39
510$ 1.36

Description

General part information

STGFW40 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.