Beta

⌘K

BA17818FP-E2

Discrete Semiconductor Products

R6009JND3TL1

Active

Rohm Semiconductor

600V 9A TO-252 (DPAK), PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Impedance Characteristics of Bypass Capacitor +45

BA17818FP-E2

Discrete Semiconductor Products

R6009JND3TL1

Active

Rohm Semiconductor

600V 9A TO-252 (DPAK), PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Impedance Characteristics of Bypass Capacitor +45

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6009JND3TL1

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	645 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	585 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.75
		10	$ 1.45
		100	$ 1.16
		500	$ 1.04
	Digi-Reel®	1	$ 1.75
		10	$ 1.45
		100	$ 1.16
		500	$ 1.04
	N/A	2400	$ 1.82
	Tape & Reel (TR)	2500	$ 1.04
Newark	Each (Supplied on Cut Tape)	1	$ 1.82
		10	$ 1.61
		25	$ 1.45
		50	$ 1.27
		100	$ 1.10
		250	$ 1.10
		500	$ 1.09

Description

General part information

R6009 Series

R6009KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.

Documents

Technical documentation and resources

Technical Data Sheet EN

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

Part Explanation

Application Note

What is a Thermal Model? (Transistor)

How to Create Symbols for PSpice Models

TO-252_TL1 Taping Information

Package Information

Report of SVHC under REACH Regulation

Environmental Data

Anti-Whisker formation - Transistors

Package Information

θ<sub>JC</sub> and Ψ<sub>JT</sub>

About Flammability of Materials

Environmental Data

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

R6009JND3 Data Sheet

Moisture Sensitivity Level - Transistors

Package Information

Judgment Criteria of Thermal Evaluation

θ<sub>JA</sub> and Ψ<sub>JT</sub>

What Is Thermal Design

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Reliability Test Result

Manufacturing Data

Types and Features of Transistors

Application Note

Double-pulse test substantiated advantages of PrestoMOS™

Technical Article

How to Use the Thermal Resistance and Thermal Characteristics Parameters

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Measurement Method and Usage of Thermal Resistance RthJC

PCB Layout Thermal Design Guide

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Benefits given by PrestoMOS™ series for the Phase-Shift Full-Bridge

Technical Article

Explanation for Marking

Package Information

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Basics of Thermal Resistance and Heat Dissipation

Condition of Soldering / Land Pattern Reference

Package Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Package Dimensions

Package Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

About Export Regulations

Export Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Notes for Calculating Power Consumption:Static Operation

How to Use LTspice® Models

Schematic Design & Verification

R6009JND3 ESD Data

Characteristics Data

Notes for Temperature Measurement Using Forward Voltage of PN Junction

List of Transistor Package Thermal Resistance

Notes for Temperature Measurement Using Thermocouples

R6009 Series

600V 9A TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature
Rohm Semiconductor R6009KNJTL	540 pF	9 A	535 mOhm	20 V	N-Channel	94 W	5 V	10 V	MOSFET (Metal Oxide)	16.5 nC	LPTS	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	Surface Mount	150 °C	-55 °C
Rohm Semiconductor R6009JND3TL1	645 pF	9 A	585 mOhm	30 V	N-Channel	125 W	7 V	15 V	MOSFET (Metal Oxide)		TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount	150 °C	-55 °C	22 nC
Rohm Semiconductor R6009ENX		9 A	535 mOhm	20 V	N-Channel	40 W		10 V	MOSFET (Metal Oxide)		TO-220FM	TO-220-3 Full Pack	600 V	Through Hole			23 nC	430 pF	150 °C
Rohm Semiconductor R6009RND3TL1		9 A	665 mOhm	30 V	N-Channel	125 W	7 V	15 V	MOSFET (Metal Oxide)		TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount			22 nC	640 pF	150 °C