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Discrete Semiconductor Products

R6009KNJTL

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Rohm Semiconductor

600V 9A TO-263, HIGH-SPEED SWITCHING POWER MOSFET

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Search across all available documentation for this part.

DocumentsCalculation of Power Dissipation in Switching Circuit θ<sub>JA</sub> and Ψ<sub>JT</sub>+43

Product dimension image

Discrete Semiconductor Products

R6009KNJTL

Active

Rohm Semiconductor

600V 9A TO-263, HIGH-SPEED SWITCHING POWER MOSFET

Deep-Dive with AI

DocumentsCalculation of Power Dissipation in Switching Circuit θ<sub>JA</sub> and Ψ<sub>JT</sub>+43

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6009KNJTL

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	535 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.89
		10	$ 1.57
		100	$ 1.25
		500	$ 1.05
	Digi-Reel®	1	$ 1.89
		10	$ 1.57
		100	$ 1.25
		500	$ 1.05
	N/A	0	$ 2.70
	Tape & Reel (TR)	1000	$ 0.90
		2000	$ 0.85
		5000	$ 0.82
		10000	$ 0.79
Newark	Each (Supplied on Cut Tape)	1	$ 1.86

Description

General part information

R6009 Series

R6009KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.

Documents

Technical documentation and resources

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Explanation for Marking

Package Information

PCB Layout Thermal Design Guide

Condition of Soldering / Land Pattern Reference

Package Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

What Is Thermal Design

Inner Structure

Package Information

Report of SVHC under REACH Regulation

Environmental Data

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Notes for Calculating Power Consumption:Static Operation

Judgment Criteria of Thermal Evaluation

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Part Explanation

Application Note

What is a Thermal Model? (Transistor)

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

About Export Regulations

Export Information

How to Use LTspice® Models

Schematic Design & Verification

How to Create Symbols for PSpice Models

Compliance of the RoHS directive

Environmental Data

Taping Information

Package Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Package Dimensions

Package Information

List of Transistor Package Thermal Resistance

Precautions When Measuring the Rear of the Package with a Thermocouple

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Reliability Test Result

Manufacturing Data

Types and Features of Transistors

Application Note

Two-Resistor Model for Thermal Simulation

Notes for Temperature Measurement Using Forward Voltage of PN Junction

θ<sub>JC</sub> and Ψ<sub>JT</sub>

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Notes for Temperature Measurement Using Thermocouples

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Anti-Whisker formation - Transistors

Package Information

Moisture Sensitivity Level - Transistors

Package Information

R6009KNJ ESD Data

Characteristics Data

R6009KNJ Data Sheet

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Basics of Thermal Resistance and Heat Dissipation

Technical Data Sheet EN

R6009 Series

600V 9A TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature
Rohm Semiconductor R6009KNJTL	540 pF	9 A	535 mOhm	20 V	N-Channel	94 W	5 V	10 V	MOSFET (Metal Oxide)	16.5 nC	LPTS	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	Surface Mount	150 °C	-55 °C
Rohm Semiconductor R6009JND3TL1	645 pF	9 A	585 mOhm	30 V	N-Channel	125 W	7 V	15 V	MOSFET (Metal Oxide)		TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount	150 °C	-55 °C	22 nC
Rohm Semiconductor R6009ENX		9 A	535 mOhm	20 V	N-Channel	40 W		10 V	MOSFET (Metal Oxide)		TO-220FM	TO-220-3 Full Pack	600 V	Through Hole			23 nC	430 pF	150 °C
Rohm Semiconductor R6009RND3TL1		9 A	665 mOhm	30 V	N-Channel	125 W	7 V	15 V	MOSFET (Metal Oxide)		TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount			22 nC	640 pF	150 °C