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R6004KNXC7G
Discrete Semiconductor Products

R6009ENX

NRND
Rohm Semiconductor

MOSFET N-CH 600V 9A TO220FM

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R6004KNXC7G
Discrete Semiconductor Products

R6009ENX

NRND
Rohm Semiconductor

MOSFET N-CH 600V 9A TO220FM

Technical Specifications

Parameters and characteristics for this part

SpecificationR6009ENX
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
Input Capacitance (Ciss) (Max) @ Vds430 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)40 W
Rds On (Max) @ Id, Vgs535 mOhm
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 3.42
10$ 2.87
100$ 2.32
500$ 2.06
1000$ 1.77
2000$ 1.66
5000$ 1.60
N/A 183$ 4.52

Description

General part information

R6009 Series

R6009KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.