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R6004KNXC7G
Discrete Semiconductor Products

R6009ENX

NRND
Rohm Semiconductor

MOSFET N-CH 600V 9A TO220FM

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R6004KNXC7G
Discrete Semiconductor Products

R6009ENX

NRND
Rohm Semiconductor

MOSFET N-CH 600V 9A TO220FM

Technical Specifications

Parameters and characteristics for this part

SpecificationR6009ENX
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
Input Capacitance (Ciss) (Max) @ Vds430 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)40 W
Rds On (Max) @ Id, Vgs535 mOhm
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 3.42
10$ 2.87
100$ 2.32
500$ 2.06
1000$ 1.77
2000$ 1.66
5000$ 1.60

Description

General part information

R6009RND3 Series

R6009JND3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).