R6009 Series

600V 9A TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Catalog

600V 9A TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature
Rohm Semiconductor R6009KNJTL	540 pF	9 A	535 mOhm	20 V	N-Channel	94 W	5 V	10 V	MOSFET (Metal Oxide)	16.5 nC	LPTS	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	Surface Mount	150 °C	-55 °C
Rohm Semiconductor R6009JND3TL1	645 pF	9 A	585 mOhm	30 V	N-Channel	125 W	7 V	15 V	MOSFET (Metal Oxide)		TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount	150 °C	-55 °C	22 nC
Rohm Semiconductor R6009ENX		9 A	535 mOhm	20 V	N-Channel	40 W		10 V	MOSFET (Metal Oxide)		TO-220FM	TO-220-3 Full Pack	600 V	Through Hole			23 nC	430 pF	150 °C
Rohm Semiconductor R6009RND3TL1		9 A	665 mOhm	30 V	N-Channel	125 W	7 V	15 V	MOSFET (Metal Oxide)		TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount			22 nC	640 pF	150 °C

600V 9A TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

R6009KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.