Discrete Semiconductor Products

FDS4675-F085

Obsolete

ON Semiconductor

P-CHANNEL POWERTRENCH® MOSFET -40V, -11A, 13MΩ

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Search across all available documentation for this part.

DocumentsPackage Drawing-751EB-SOIC8 Datasheet

Discrete Semiconductor Products

FDS4675-F085

Obsolete

ON Semiconductor

P-CHANNEL POWERTRENCH® MOSFET -40V, -11A, 13MΩ

Deep-Dive with AI

DocumentsPackage Drawing-751EB-SOIC8 Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS4675-F085

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.4 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDS4675_F085 Series

P-Channel PowerTrench® MOSFET, 40V, -11A, 13mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Grade
ON Semiconductor FDS4675	4350 pF	2.4 W	13 mOhm	-55 °C	175 ░C	56 nC	4.5 V 10 V	20 V	3 V	40 V	P-Channel	8-SOIC	MOSFET (Metal Oxide)	11 A	8-SOIC	3.9 mm	0.154 in	Surface Mount
ON Semiconductor FDS4685	1872 pF	2.5 W	27 mOhm	-55 °C	150 °C		4.5 V 10 V	20 V	3 V	40 V	P-Channel	8-SOIC	MOSFET (Metal Oxide)	8.2 A	8-SOIC	3.9 mm	0.154 in	Surface Mount	27 nC
ON Semiconductor FDS4675-F085	4350 pF	2.4 W	13 mOhm	-55 °C	150 °C	56 nC	4.5 V 10 V	20 V	3 V	40 V	P-Channel	8-SOIC	MOSFET (Metal Oxide)	11 A	8-SOIC	3.9 mm	0.154 in	Surface Mount		AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS4675_F085 Series

This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).