FDS4675_F085 Series

P-Channel PowerTrench® MOSFET, 40V, -11A, 13mΩ

Catalog

P-Channel PowerTrench® MOSFET, 40V, -11A, 13mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Grade
ON Semiconductor FDS4675	4350 pF	2.4 W	13 mOhm	-55 °C	175 ░C	56 nC	4.5 V 10 V	20 V	3 V	40 V	P-Channel	8-SOIC	MOSFET (Metal Oxide)	11 A	8-SOIC	3.9 mm	0.154 in	Surface Mount
ON Semiconductor FDS4685	1872 pF	2.5 W	27 mOhm	-55 °C	150 °C		4.5 V 10 V	20 V	3 V	40 V	P-Channel	8-SOIC	MOSFET (Metal Oxide)	8.2 A	8-SOIC	3.9 mm	0.154 in	Surface Mount	27 nC
ON Semiconductor FDS4675-F085	4350 pF	2.4 W	13 mOhm	-55 °C	150 °C	56 nC	4.5 V 10 V	20 V	3 V	40 V	P-Channel	8-SOIC	MOSFET (Metal Oxide)	11 A	8-SOIC	3.9 mm	0.154 in	Surface Mount		AEC-Q101	Automotive

Catalog

P-Channel PowerTrench® MOSFET, 40V, -11A, 13mΩ

Key Features

• –11 A, –40 VRDS(ON)= 0.013Ω @ VGS= –10 VRDS(ON)= 0.017Ω @ VGS= –4.5 V

• Fast switching speed

• High performance trench technology for extremelylow RDS(ON)

• High power and current handling capability

• Qualified to AEC Q101

• RoHS Compliant

Description

This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).