Discrete Semiconductor Products
FDS4685
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 40 V, 8.2 A, 0.022 OHM, SOIC, SURFACE MOUNT
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Discrete Semiconductor Products
FDS4685
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 40 V, 8.2 A, 0.022 OHM, SOIC, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDS4685 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.2 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 27 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1872 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 27 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.08 | |
| 10 | $ 0.88 | |||
| 100 | $ 0.68 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.47 | |||
| Digi-Reel® | 1 | $ 1.08 | ||
| 10 | $ 0.88 | |||
| 100 | $ 0.68 | |||
| 500 | $ 0.58 | |||
| 1000 | $ 0.47 | |||
| Tape & Reel (TR) | 2500 | $ 0.44 | ||
| 5000 | $ 0.42 | |||
| 12500 | $ 0.40 | |||
| Newark | Each (Supplied on Full Reel) | 2500 | $ 0.47 | |
| 5000 | $ 0.46 | |||
| 10000 | $ 0.44 | |||
| ON Semiconductor | N/A | 1 | $ 0.21 | |
Description
General part information
FDS4675_F085 Series
This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).
Documents
Technical documentation and resources
