Zenode.ai Logo
Beta
ONSEMI FDS4675
Discrete Semiconductor Products

FDS4675

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 40 V, 11 A, 0.013 OHM, SOIC, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

ONSEMI FDS4675
Discrete Semiconductor Products

FDS4675

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 40 V, 11 A, 0.013 OHM, SOIC, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS4675
Current - Continuous Drain (Id) @ 25°C11 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
Input Capacitance (Ciss) (Max) @ Vds4350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.4 W
Rds On (Max) @ Id, Vgs13 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.37
10$ 1.12
100$ 0.87
500$ 0.74
1000$ 0.60
Digi-Reel® 1$ 1.37
10$ 1.12
100$ 0.87
500$ 0.74
1000$ 0.60
Tape & Reel (TR) 2500$ 0.57
5000$ 0.54
12500$ 0.51
NewarkEach (Supplied on Cut Tape) 1$ 2.30
10$ 1.60
25$ 1.46
50$ 1.32
100$ 1.18
250$ 1.08
ON SemiconductorN/A 1$ 0.40

Description

General part information

FDS4675_F085 Series

This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).