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Discrete Semiconductor Products

STB23NM50N

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STMicroelectronics

POWER MOSFET, N CHANNEL, 500 V, 17 A, 0.162 OHM, TO-263 (D2PAK), SURFACE MOUNT

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D2Pak
Discrete Semiconductor Products

STB23NM50N

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 500 V, 17 A, 0.162 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB23NM50N
Current - Continuous Drain (Id) @ 25°C17 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1330 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs190 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.70
10$ 3.94
100$ 3.19
500$ 2.84
Digi-Reel® 1$ 4.70
10$ 3.94
100$ 3.19
500$ 2.84
N/A 375$ 5.72
Tape & Reel (TR) 1000$ 2.19

Description

General part information

STB23 Series

These devices are made using the second generation of MDmesh™technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources