STB23 Series

N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package

Catalog

N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package

Part	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	FET Type	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STB23N80K5	5 V	MOSFET (Metal Oxide)	30 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	16 A	1000 pF	800 V	10 V	150 °C	-55 °C	190 W	280 mOhm	TO-263 (D2PAK)
STMicroelectronics STB23NM50N	4 V	MOSFET (Metal Oxide)	25 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	17 A		500 V	10 V			125 W	190 mOhm	TO-263 (D2PAK)	150 °C	1330 pF	45 nC

Catalog

N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package

Description

These devices are made using the second generation of MDmesh™technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.