STB23N80K5
ActiveN-CHANNEL 800 V, 0.23 OHM TYP., 16 A MDMESH K5 POWER MOSFET IN D2PAK PACKAGE
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STB23N80K5
ActiveN-CHANNEL 800 V, 0.23 OHM TYP., 16 A MDMESH K5 POWER MOSFET IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB23N80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs | 280 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB23 Series
These devices are made using the second generation of MDmesh™technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources
