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8-HSMT
Discrete Semiconductor Products

RQ3E100ATTB

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Rohm Semiconductor

MOSFET P-CH 30V 10A/31A 8HSMT

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8-HSMT
Discrete Semiconductor Products

RQ3E100ATTB

Active
Rohm Semiconductor

MOSFET P-CH 30V 10A/31A 8HSMT

Technical Specifications

Parameters and characteristics for this part

SpecificationRQ3E100ATTB
Current - Continuous Drain (Id) @ 25°C31 A, 10 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]42 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1900 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2 W
Rds On (Max) @ Id, Vgs [Max]11.4 mOhm
Supplier Device Package [custom]8-HSMT
Supplier Device Package [x]3.2
Supplier Device Package [y]3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

RQ3E100 Series

Pch -30V -31A Power MOSFET

PartCurrent - Continuous Drain (Id) @ 25°CPower Dissipation (Max)Operating TemperatureInput Capacitance (Ciss) (Max) @ Vds [Max]Package / CaseGate Charge (Qg) (Max) @ Vgs [Max]Supplier Device Package [x]Supplier Device Package [custom]Supplier Device Package [y]TechnologyVgs (Max)FET TypeVgs(th) (Max) @ IdMounting TypeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, Vgs [Max]Rds On (Max) @ Id, Vgs
8-HSMT
Rohm Semiconductor
10 A
31 A
2 W
150 °C
1900 pF
8-PowerVDFN
42 nC
3.2
8-HSMT
3
MOSFET (Metal Oxide)
20 V
P-Channel
2.5 V
Surface Mount
30 V
4.5 V
10 V
11.4 mOhm
8-HSMT
Rohm Semiconductor
10 A
2 W
150 °C
1100 pF
8-PowerVDFN
22 nC
3.2
8-HSMT
3
MOSFET (Metal Oxide)
20 V
N-Channel
2.5 V
Surface Mount
30 V
4.5 V
10 V
10.4 mOhm
Product schematic image
Rohm Semiconductor
10 A
21 A
2 W
15 W
150 °C
1100 pF
8-PowerVDFN
22 nC
3.2
8-HSMT
3
MOSFET (Metal Oxide)
20 V
N-Channel
2.5 V
Surface Mount
30 V
4.5 V
10 V
10.4 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.84
10$ 0.69
100$ 0.53
500$ 0.45
1000$ 0.37
Digi-Reel® 1$ 0.84
10$ 0.69
100$ 0.53
500$ 0.45
1000$ 0.37
N/A 6452$ 0.90
Tape & Reel (TR) 3000$ 0.35
6000$ 0.33
9000$ 0.32
30000$ 0.32

Description

General part information

RQ3E100 Series

RQ3E100AT is the high reliability transistor, suitable for switching applications.

Documents

Technical documentation and resources

Package Dimensions

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

How to Use LTspice® Models

Schematic Design & Verification

What Is Thermal Design

Thermal Design

Anti-Whisker formation - Transistors

Package Information

PCB Layout Thermal Design Guide

Thermal Design

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Thermal Design

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

What is a Thermal Model? (Transistor)

Thermal Design

Notes for Temperature Measurement Using Thermocouples

Thermal Design

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Types and Features of Transistors

Application Note

Part Explanation

Application Note

Explanation for Marking

Package Information

Basics of Thermal Resistance and Heat Dissipation

Thermal Design

Moisture Sensitivity Level - Transistors

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Thermal Design

About Export Regulations

Export Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Thermal Design

Condition of Soldering / Land Pattern Reference

Package Information

RQ3E100AT Data Sheet

Data Sheet

Taping Information

Package Information

RQ3E100AT ESD Data

Characteristics Data

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

Compliance of the RoHS directive

Environmental Data

HSMT8 Single Cu Inner Structure

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Thermal Design

About Flammability of Materials

Environmental Data

How to Create Symbols for PSpice Models

Models

P-channel Power MOSFETs selection guide

Technical Article

Notes for Calculating Power Consumption:Static Operation

Thermal Design

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article