Specification	RQ3E100BNTB

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	10.4 mOhm
Supplier Device Package [custom]	8-HSMT
Supplier Device Package [x]	3.2
Supplier Device Package [y]	3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

RQ3E100 Series

Pch -30V -31A Power MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package [x]	Supplier Device Package [custom]	Supplier Device Package [y]	Technology	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs
Rohm Semiconductor RQ3E100ATTB	10 A 31 A	2 W	150 °C	1900 pF	8-PowerVDFN	42 nC	3.2	8-HSMT	3	MOSFET (Metal Oxide)	20 V	P-Channel	2.5 V	Surface Mount	30 V	4.5 V 10 V	11.4 mOhm
Rohm Semiconductor RQ3E100BNTB	10 A	2 W	150 °C	1100 pF	8-PowerVDFN	22 nC	3.2	8-HSMT	3	MOSFET (Metal Oxide)	20 V	N-Channel	2.5 V	Surface Mount	30 V	4.5 V 10 V		10.4 mOhm
Rohm Semiconductor RQ3E100BNTB1	10 A 21 A	2 W 15 W	150 °C	1100 pF	8-PowerVDFN	22 nC	3.2	8-HSMT	3	MOSFET (Metal Oxide)	20 V	N-Channel	2.5 V	Surface Mount	30 V	4.5 V 10 V		10.4 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RQ3E100AT is the high reliability transistor, suitable for switching applications.