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Discrete Semiconductor Products

RQ3E100BNTB1

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Rohm Semiconductor

NCH 30V 21A POWER MOSFET: RQ3E10

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DocumentsWhat is a Thermal Model? (Transistor)Types and Features of Transistors +36

Product schematic image

Discrete Semiconductor Products

RQ3E100BNTB1

Active

Rohm Semiconductor

NCH 30V 21A POWER MOSFET: RQ3E10

Deep-Dive with AI

DocumentsWhat is a Thermal Model? (Transistor)Types and Features of Transistors +36

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RQ3E100BNTB1

Current - Continuous Drain (Id) @ 25°C	10 A, 21 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2 W, 15 W
Rds On (Max) @ Id, Vgs	10.4 mOhm
Supplier Device Package [custom]	8-HSMT
Supplier Device Package [x]	3.2
Supplier Device Package [y]	3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.61
		10	$ 1.02
		100	$ 0.68
		500	$ 0.53
		1000	$ 0.49
	Digi-Reel®	1	$ 1.61
		10	$ 1.02
		100	$ 0.68
		500	$ 0.53
		1000	$ 0.49
	N/A	6054	$ 1.60
	Tape & Reel (TR)	3000	$ 0.43
		6000	$ 0.40
		9000	$ 0.39
Mouser	N/A	1	$ 1.20
		10	$ 0.84
		100	$ 0.65
		500	$ 0.55
		1000	$ 0.50
		3000	$ 0.42
		6000	$ 0.41

Description

General part information

RQ3E100 Series

RQ3E100AT is the high reliability transistor, suitable for switching applications.

Documents

Technical documentation and resources

What is a Thermal Model? (Transistor)

Types and Features of Transistors

Application Note

Notes for Temperature Measurement Using Forward Voltage of PN Junction

About Flammability of Materials

Environmental Data

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

HSMT8 Single Cu Inner Structure

Package Information

Basics of Thermal Resistance and Heat Dissipation

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

RQ3E100BN Data Sheet

Anti-Whisker formation - Transistors

Package Information

Precautions When Measuring the Rear of the Package with a Thermocouple

Moisture Sensitivity Level - Transistors

Package Information

Constitution Materials List

Environmental Data

Part Explanation

Application Note

HSMT8(TB1) Explanation for Marking

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

HSMT8(TB1) Dimension

Package Information

Notes for Temperature Measurement Using Thermocouples

What Is Thermal Design

List of Transistor Package Thermal Resistance

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

PCB Layout Thermal Design Guide

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

ESD Data

Characteristics Data

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

Condition of Soldering / Land Pattern Reference

Package Information

How to Use LTspice® Models

Schematic Design & Verification

How to Create Symbols for PSpice Models

Notes for Calculating Power Consumption:Static Operation

Two-Resistor Model for Thermal Simulation

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

HSMT8(TB1) Taping Information

Package Information

About Export Regulations

Export Information

RQ3E100 Series

Pch -30V -31A Power MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package [x]	Supplier Device Package [custom]	Supplier Device Package [y]	Technology	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs
Rohm Semiconductor RQ3E100ATTB	10 A 31 A	2 W	150 °C	1900 pF	8-PowerVDFN	42 nC	3.2	8-HSMT	3	MOSFET (Metal Oxide)	20 V	P-Channel	2.5 V	Surface Mount	30 V	4.5 V 10 V	11.4 mOhm
Rohm Semiconductor RQ3E100BNTB	10 A	2 W	150 °C	1100 pF	8-PowerVDFN	22 nC	3.2	8-HSMT	3	MOSFET (Metal Oxide)	20 V	N-Channel	2.5 V	Surface Mount	30 V	4.5 V 10 V		10.4 mOhm
Rohm Semiconductor RQ3E100BNTB1	10 A 21 A	2 W 15 W	150 °C	1100 pF	8-PowerVDFN	22 nC	3.2	8-HSMT	3	MOSFET (Metal Oxide)	20 V	N-Channel	2.5 V	Surface Mount	30 V	4.5 V 10 V		10.4 mOhm