Catalog
Pch -30V -31A Power MOSFET
Description
AI
RQ3E100AT is the high reliability transistor, suitable for switching applications.
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Pch -30V -31A Power MOSFET
Pch -30V -31A Power MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package [x] | Supplier Device Package [custom] | Supplier Device Package [y] | Technology | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 10 A 31 A | 2 W | 150 °C | 1900 pF | 8-PowerVDFN | 42 nC | 3.2 | 8-HSMT | 3 | MOSFET (Metal Oxide) | 20 V | P-Channel | 2.5 V | Surface Mount | 30 V | 4.5 V 10 V | 11.4 mOhm | |
Rohm Semiconductor | 10 A | 2 W | 150 °C | 1100 pF | 8-PowerVDFN | 22 nC | 3.2 | 8-HSMT | 3 | MOSFET (Metal Oxide) | 20 V | N-Channel | 2.5 V | Surface Mount | 30 V | 4.5 V 10 V | 10.4 mOhm | |
 Rohm Semiconductor | 10 A 21 A | 2 W 15 W | 150 °C | 1100 pF | 8-PowerVDFN | 22 nC | 3.2 | 8-HSMT | 3 | MOSFET (Metal Oxide) | 20 V | N-Channel | 2.5 V | Surface Mount | 30 V | 4.5 V 10 V | 10.4 mOhm |