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BROADCOM ACPL-247-560E
Integrated Circuits (ICs)

STDRIVEG600

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STMicroelectronics

HIGH VOLTAGE HALF-BRIDGE GATE DRIVER FOR GAN TRANSISTORS

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENProduct Change Notice EN+1
BROADCOM ACPL-247-560E
Integrated Circuits (ICs)

STDRIVEG600

Active
STMicroelectronics

HIGH VOLTAGE HALF-BRIDGE GATE DRIVER FOR GAN TRANSISTORS

Deep-Dive with AI

DocumentsTechnical Data Sheet ENProduct Change Notice EN+1

Technical Specifications

Parameters and characteristics for this part

SpecificationSTDRIVEG600
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case16-SOIC
Package / Case0.154 in, 3.9 mm
Supplier Device Package16-SO
Voltage - Supply [Max]5 V
Voltage - Supply [Min]3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 900$ 5.02
NewarkEach 1$ 2.20
10$ 1.54
100$ 1.43
500$ 1.33
1000$ 1.26
3000$ 1.20
5000$ 1.19

Description

General part information

STDRIVEG600 Series

The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.

The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.

The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.