STDRIVEG600W
ActiveHIGH VOLTAGE HALF-BRIDGE GATE DRIVER FOR GAN TRANSISTORS
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STDRIVEG600W
ActiveHIGH VOLTAGE HALF-BRIDGE GATE DRIVER FOR GAN TRANSISTORS
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Technical Specifications
Parameters and characteristics for this part
| Specification | STDRIVEG600W |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) | 5.5 A, 6 A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, GaN FET, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 620 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.45 V, 2 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Die |
| Rise / Fall Time (Typ) | 5 ns, 7 ns |
| Supplier Device Package | Wafer |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 2.37 | |
| 10 | $ 1.97 | |||
| 100 | $ 1.57 | |||
| 500 | $ 1.33 | |||
| 1000 | $ 1.13 | |||
| 2000 | $ 1.07 | |||
| 5000 | $ 1.03 | |||
| 10000 | $ 1.00 | |||
| N/A | 0 | $ 1.94 | ||
Description
General part information
STDRIVEG600 Series
The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.
The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.
The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Documents
Technical documentation and resources
