STDRIVEG600TR
ActiveHIGH VOLTAGE HALF-BRIDGE GATE DRIVER FOR GAN TRANSISTORS
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STDRIVEG600TR
ActiveHIGH VOLTAGE HALF-BRIDGE GATE DRIVER FOR GAN TRANSISTORS
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Technical Specifications
Parameters and characteristics for this part
| Specification | STDRIVEG600TR |
|---|---|
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 16-SOIC |
| Package / Case | 0.154 in, 3.9 mm |
| Supplier Device Package | 16-SO |
| Voltage - Supply [Max] | 5 V |
| Voltage - Supply [Min] | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STDRIVEG600 Series
The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.
The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.
The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Documents
Technical documentation and resources
