
Discrete Semiconductor Products
PSMN8R5-100PSQ
ObsoleteFreescale Semiconductor - NXP
MOSFET N-CH 100V 100A TO220AB
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Discrete Semiconductor Products
PSMN8R5-100PSQ
ObsoleteFreescale Semiconductor - NXP
MOSFET N-CH 100V 100A TO220AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN8R5-100PSQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 111 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 263 W |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.88 | |
| 10 | $ 2.42 | |||
| 100 | $ 1.96 | |||
| 500 | $ 1.74 | |||
| 1000 | $ 1.49 | |||
Description
General part information
PSMN8R5-40MLD Series
60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.
Documents
Technical documentation and resources