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TO-220AB
Discrete Semiconductor Products

PSMN8R5-100PSQ

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 100V 100A TO220AB

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TO-220AB
Discrete Semiconductor Products

PSMN8R5-100PSQ

Obsolete
Freescale Semiconductor - NXP

MOSFET N-CH 100V 100A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN8R5-100PSQ
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]111 nC
Input Capacitance (Ciss) (Max) @ Vds5512 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]263 W
Rds On (Max) @ Id, Vgs8.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.88
10$ 2.42
100$ 1.96
500$ 1.74
1000$ 1.49

Description

General part information

PSMN8R5-40MLD Series

60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.

Documents

Technical documentation and resources