Discrete Semiconductor Products
PSMN8R5-40MLDX
ActiveFreescale Semiconductor - NXP
N-CHANNEL 40 V, 8.5 MΩ, LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWER-S3 TECHNOLOGY
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Discrete Semiconductor Products
PSMN8R5-40MLDX
ActiveFreescale Semiconductor - NXP
N-CHANNEL 40 V, 8.5 MΩ, LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWER-S3 TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN8R5-40MLDX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 27 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1814 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 59 W |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm |
| Supplier Device Package | LFPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PSMN8R5-40MLD Series
60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.
Documents
Technical documentation and resources
