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Discrete Semiconductor Products

PSMN8R5-40MSDX

Active
Freescale Semiconductor - NXP

MOSFET N-CH 40V 60A LFPAK33

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DocumentsDatasheet
Discrete Semiconductor Products

PSMN8R5-40MSDX

Active
Freescale Semiconductor - NXP

MOSFET N-CH 40V 60A LFPAK33

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN8R5-40MSDX
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1322 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)59 W
Rds On (Max) @ Id, Vgs8.5 mOhm
Supplier Device PackageLFPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.57
10$ 0.49
100$ 0.34
500$ 0.29
Digi-Reel® 1$ 0.57
10$ 0.49
100$ 0.34
500$ 0.29
Tape & Reel (TR) 1500$ 0.27

Description

General part information

PSMN8R5-40MLD Series

60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.

Documents

Technical documentation and resources