PSMN8R5-40MLD Series

N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

Manufacturer: Freescale Semiconductor - NXP

Catalog

N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

Part	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Package / Case	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PSMN8R5-40MSDX	Surface Mount	3.6 V	N-Channel	59 W	MOSFET (Metal Oxide)	60 A	20 V	19 nC	1322 pF	8.5 mOhm	10 V	LFPAK33	-55 °C	175 ░C	40 V
Freescale Semiconductor - NXP PSMN8R5-40MLDX	Surface Mount		N-Channel	59 W	MOSFET (Metal Oxide)	60 A	20 V			8.5 mOhm	4.5 V 10 V	LFPAK33	-55 °C	175 ░C	40 V	1814 pF	27 nC	2.15 V
Freescale Semiconductor - NXP PSMN8R5-100PSQ	Through Hole		N-Channel		MOSFET (Metal Oxide)	100 A	20 V			8.5 mOhm	10 V	TO-220AB	-55 °C	175 ░C	100 V	5512 pF	111 nC		TO-220-3	263 W

Catalog

N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

Description

60 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies.