2N3810
ActiveDUAL SMALL-SIGNAL BJT TO-78 ROHS COMPLIANT: YES
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2N3810
ActiveDUAL SMALL-SIGNAL BJT TO-78 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3810 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 50 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 150 |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Power - Max [Max] | 350 mW |
| Supplier Device Package | TO-78-6 |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 16.28 | |
| 100 | $ 15.12 | |||
| Microchip Direct | N/A | 1 | $ 16.28 | |
| Newark | Each | 100 | $ 15.12 | |
| 500 | $ 14.54 | |||
Description
General part information
2N3810-Dual-Transistor Series
This specification covers the performance requirements for two electrically isolated, matched PNP, radiation hardened, silicon 2N3810, and 2N3811 Unitized, transistors as one dual unit for use in particular switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS), are provided for each encapsulated device type as specified in MIL-PRF-19500/336 and two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). The device package outlines are as follows: TO-78 and U for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/336.
Documents
Technical documentation and resources