2N3810-Dual-Transistor Series

MIL-PRF-19500/336

Catalog

MIL-PRF-19500/336

Part	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)
Microchip Technology 2N3810	TO-78-6 Metal Can	2 PNP (Dual)	60 V	150	350 mW	TO-78-6	50 mA	Through Hole	10 µA	250 mV
Microchip Technology 2N3838	6-FlatPack	1 NPN 1 PNP		100	350 mW	6-Flatpack	600 mA	Surface Mount	10 µA	400 mV	40 V

Catalog

MIL-PRF-19500/336

Key Features

• undefined

Description

This specification covers the performance requirements for two electrically isolated, matched PNP, radiation hardened, silicon 2N3810, and 2N3811 Unitized, transistors as one dual unit for use in particular switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS), are provided for each encapsulated device type as specified in MIL-PRF-19500/336 and two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). The device package outlines are as follows: TO-78 and U for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/336.