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Discrete Semiconductor Products

2N3838

Active
Microchip Technology

DUAL SMALL-SIGNAL BJT 6L FP ROHS COMPLIANT: YES

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Search across all available documentation for this part.

Discrete Semiconductor Products

2N3838

Active
Microchip Technology

DUAL SMALL-SIGNAL BJT 6L FP ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3838
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeSurface Mount
Package / Case6-FlatPack
Power - Max [Max]350 mW
Supplier Device Package6-Flatpack
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic400 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 49.05
NewarkEach 100$ 49.05
500$ 47.16

Description

General part information

2N3810-Dual-Transistor Series

This specification covers the performance requirements for two electrically isolated, matched PNP, radiation hardened, silicon 2N3810, and 2N3811 Unitized, transistors as one dual unit for use in particular switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS), are provided for each encapsulated device type as specified in MIL-PRF-19500/336 and two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). The device package outlines are as follows: TO-78 and U for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/336.

Documents

Technical documentation and resources