Discrete Semiconductor Products

R6004RND3TL1

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POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 600V, 1.73OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

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DocumentsDatasheet How to Use the Thermal Resistance and Thermal Characteristics Parameters +29

Discrete Semiconductor Products

R6004RND3TL1

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Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 600V, 1.73OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

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DocumentsDatasheet How to Use the Thermal Resistance and Thermal Characteristics Parameters +29

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6004RND3TL1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	1.73 Ohm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	7 V

R6004JND3 Series

600V 4A, TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	FET Type	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Rohm Semiconductor R6004RND3TL1	Surface Mount	10.5 nC	230 pF	15 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.73 Ohm	4 A	7 V	60 W	TO-252	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	30 V
Rohm Semiconductor R6004CNDTL	Surface Mount			10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.8 Ohm	4 A	4.5 V	40 W	CPT3	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	25 V	280 pF	11 nC
Rohm Semiconductor R6004KNX	Through Hole			10 V	TO-220-3 Full Pack	980 mOhm	4 A		40 W	TO-220FM	N-Channel		MOSFET (Metal Oxide)	600 V	20 V	280 pF	10.2 nC	-55 °C	150 °C
Rohm Semiconductor R6004JND3TL1	Surface Mount	10.5 nC	260 pF	15 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.43 Ohm	4 A	7 V	60 W	TO-252	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	30 V
Rohm Semiconductor R6004ENDTL	Surface Mount		250 pF	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	980 mOhm	4 A		20 W	CPT3	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	20 V
Rohm Semiconductor R6004JNJGTL	Surface Mount	10.5 nC	260 pF	15 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.43 Ohm	4 A	7 V	60 W	LPTS	N-Channel		MOSFET (Metal Oxide)	600 V	30 V			-55 °C	150 °C
Rohm Semiconductor R6004ENX	Through Hole		250 pF	10 V	TO-220-3 Full Pack	980 mOhm	4 A		40 W	TO-220FM	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.79
		10	$ 1.13
		25	$ 0.96
		100	$ 0.77
		250	$ 0.67
		500	$ 0.61
		1000	$ 0.57
	Digi-Reel®	1	$ 1.79
		10	$ 1.13
		25	$ 0.96
		100	$ 0.77
		250	$ 0.67
		500	$ 0.61
		1000	$ 0.57
	Tape & Reel (TR)	2500	$ 0.52
		5000	$ 0.48
		7500	$ 0.47
		12500	$ 0.45
		17500	$ 0.44
Newark	Each (Supplied on Cut Tape)	1	$ 0.68

Description

General part information

R6004JND3 Series

R6004JND3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).