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R6004RND3TL1Active
Rohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 600V, 1.73OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2
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Datasheet
How to Use the Thermal Resistance and Thermal Characteristics Parameters