Specification	R6004ENX

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	980 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

R6004JND3 Series

600V 4A, TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	FET Type	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Rohm Semiconductor R6004RND3TL1	Surface Mount	10.5 nC	230 pF	15 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.73 Ohm	4 A	7 V	60 W	TO-252	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	30 V
Rohm Semiconductor R6004CNDTL	Surface Mount			10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.8 Ohm	4 A	4.5 V	40 W	CPT3	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	25 V	280 pF	11 nC
Rohm Semiconductor R6004KNX	Through Hole			10 V	TO-220-3 Full Pack	980 mOhm	4 A		40 W	TO-220FM	N-Channel		MOSFET (Metal Oxide)	600 V	20 V	280 pF	10.2 nC	-55 °C	150 °C
Rohm Semiconductor R6004JND3TL1	Surface Mount	10.5 nC	260 pF	15 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.43 Ohm	4 A	7 V	60 W	TO-252	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	30 V
Rohm Semiconductor R6004ENDTL	Surface Mount		250 pF	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	980 mOhm	4 A		20 W	CPT3	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	20 V
Rohm Semiconductor R6004JNJGTL	Surface Mount	10.5 nC	260 pF	15 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.43 Ohm	4 A	7 V	60 W	LPTS	N-Channel		MOSFET (Metal Oxide)	600 V	30 V			-55 °C	150 °C
Rohm Semiconductor R6004ENX	Through Hole		250 pF	10 V	TO-220-3 Full Pack	980 mOhm	4 A		40 W	TO-220FM	N-Channel	150 °C	MOSFET (Metal Oxide)	600 V	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 2.38
		10	$ 1.53
		100	$ 1.04
		500	$ 0.83
		1000	$ 0.77
		2000	$ 0.71
		5000	$ 0.66
Newark	Each	1	$ 2.29
		10	$ 1.54
		100	$ 0.95
		500	$ 0.78
		1000	$ 0.72
		2500	$ 0.71
		10000	$ 0.69

Description

General part information

R6004JND3 Series

R6004JND3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

R6004ENX

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R6004ENX

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Technical Specifications

R6004JND3 Series

Pricing

Description

R6004JND3 Series

Documents

Technical Data Sheet EN

TO-220FM Part Marking

Transistor, MOSFET Flammability

TO220FM Inner Structure

R6004JND3 Series