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ONSEMI FDMC89521L
Discrete Semiconductor Products

NVMFD5C668NLT1G

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ON Semiconductor

POWER MOSFET 60 V, 68 A, 6.5 MΩ, DUAL N−CHANNEL

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ONSEMI FDMC89521L
Discrete Semiconductor Products

NVMFD5C668NLT1G

Active
ON Semiconductor

POWER MOSFET 60 V, 68 A, 6.5 MΩ, DUAL N−CHANNEL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFD5C668NLT1G
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C15.5 A, 68 A
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs21.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1440 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max57.5 W, 3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs6.5 mOhm
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.13
10$ 2.72
100$ 1.92
500$ 1.58
Digi-Reel® 1$ 4.13
10$ 2.72
100$ 1.92
500$ 1.58
Tape & Reel (TR) 1500$ 1.46
NewarkEach (Supplied on Cut Tape) 1$ 3.55
10$ 2.61
25$ 2.53
50$ 2.20
100$ 1.88
250$ 1.87
500$ 1.54
1000$ 1.53
ON SemiconductorN/A 1$ 1.35

Description

General part information

NVMFD5C674NL Series

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources