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8 Power TDFN
Discrete Semiconductor Products

NVMFD5C674NLWFT1G

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ON Semiconductor

DUAL N−CHANNEL POWER MOSFET 60V, 42A, 14.4MΩ

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8 Power TDFN
Discrete Semiconductor Products

NVMFD5C674NLWFT1G

Active
ON Semiconductor

DUAL N−CHANNEL POWER MOSFET 60V, 42A, 14.4MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFD5C674NLWFT1G
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C42 A, 11 A
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs [Max]4.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds640 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max37 W, 3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs14.4 mOhm
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.70
10$ 1.75
100$ 1.20
500$ 0.97
Digi-Reel® 1$ 2.70
10$ 1.75
100$ 1.20
500$ 0.97
Tape & Reel (TR) 1500$ 0.86
3000$ 0.82
NewarkEach (Supplied on Full Reel) 1$ 1.13
3000$ 1.09
6000$ 0.99
12000$ 0.89
18000$ 0.85
30000$ 0.83
ON SemiconductorN/A 1$ 0.76

Description

General part information

NVMFD5C674NL Series

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources