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8 Power TDFN
Discrete Semiconductor Products

NVMFD5C470NT1G

Active
ON Semiconductor

POWER MOSFET 40 V, 36 A, 11.7 MΩ, DUAL N-CHANNEL, STANDARD LEVEL

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8 Power TDFN
Discrete Semiconductor Products

NVMFD5C470NT1G

Active
ON Semiconductor

POWER MOSFET 40 V, 36 A, 11.7 MΩ, DUAL N-CHANNEL, STANDARD LEVEL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFD5C470NT1G
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C36 A, 11.7 A
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs [Max]8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds420 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs11.7 mOhm
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.89
10$ 1.57
100$ 1.25
500$ 1.06
Digi-Reel® 1$ 1.89
10$ 1.57
100$ 1.25
500$ 1.06
Tape & Reel (TR) 1500$ 0.86
3000$ 0.80
4500$ 0.79
NewarkEach 1000$ 1.06
2500$ 0.85
10000$ 0.83
ON SemiconductorN/A 1$ 0.73

Description

General part information

NVMFD5C674NL Series

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources