APTM60H23FT1G

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POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 600V, 0.23OHM, 4-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

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Discrete Semiconductor Products

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POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 600V, 0.23OHM, 4-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

Specification	APTM60H23FT1G

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds	5316 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP1
Power - Max [Max]	208 W
Rds On (Max) @ Id, Vgs	276 mOhm
Supplier Device Package	SP1
Technology	MOSFET (Metal Oxide)

600V/Full bridge/Si MOSFET modules

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Configuration	Gate Charge (Qg) (Max) @ Vgs	Configuration
Microchip Technology APTM60A11FT1G	132 mOhm	600 V	150 °C	-40 °C	MOSFET (Metal Oxide)	SP1	10552 pF	330 nC	Chassis Mount	390 W	5 V	SP1	40 A	2 N-Channel (Half Bridge)
Microchip Technology APTM60H23FT1G	276 mOhm	600 V	150 °C	-40 °C	MOSFET (Metal Oxide)	SP1	5316 pF		Chassis Mount	208 W		SP1	20 A		165 nC	4 N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* FREDFETs

* Low RDSon

* Low input and Miller capacitance

Technical documentation and resources